Electric-programmable magnetic module and picking-up and placement process for electronic devices

ABSTRACT

A picking-up and placement process for electronic devices comprising: (a) providing a first substrate having a plurality of electronic devices formed thereon, the electronic devices being arranged in an array, and each of the electronic devices comprising a magnetic portion; (b) selectively picking-up parts of the electronic devices from the first substrate via a magnetic force generated from an electric-programmable magnetic module; and (c) bonding the parts of the electronic devices picked-up by the electric-programmable magnetic module with a second substrate.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the priority benefits of U.S. provisionalapplication Ser. No.62/085,657, filed on Dec. 1, 2014, and Taiwanapplication serial no. 103143505, filed on Dec. 12, 2014. The entiretyof each of the above-mentioned patent applications is herebyincorporated by reference herein and made a part of this specification.

BACKGROUND OF THE DISCLOSURE

1. Technical Field

The present disclosure generally relates to a picking-up and placementprocess for electronic devices, in particular, to a picking-up andplacement process for electronic devices using an electric-programmablemagnetic module.

2. Description of Related Art

Inorganic light emitting diodes (LEDs) have features of self-luminous,high brightness and so on, and therefore have been widely applied in thefields of illumination, display, projector and so forth. Takingmonolithic full color micro-LED displays as an example, monolithicmicro-displays have been widely used in projector and faced with abottleneck of colorizing technology. Generally, in order to obtaindifferent colored lights, epitaxial processes for fabricating a singleLED chip including a plurality of light emitting layers capable ofemitting different colored lights has already been proposed. In thiscase, the single LED chip can provide different colored lights. Sincelattice constants of the light emitting layers capable of emittingdifferent colored lights are different, growth of the light emittinglayers on a same substrate is difficult to be achieved. Accordingly,another solution has been proposed. In order to obtain different coloredlights, at least one LED chip capable of emitting light with shortwavelength and a plurality of wavelength conversion materials are used,wherein the wavelength conversion materials are capable of being excitedby the light emitted from the LED chip and generate excited light havingdifferent color. However, the conversion efficiency of the wavelengthconversion materials is low and it is difficult to coat the wavelengthconversion materials uniformly.

The picking-up and placement technique for LED chips has a better chanceto enhance brightness and display quality of a monolithic micro-displaysignificantly. To one ordinary skilled in the art, how to efficientlypick-up and place the LED chips to a circuit substrate of the monolithicmicro-display is an important issue.

SUMMARY OF THE DISCLOSURE

One of exemplary embodiments provides a picking-up and placement processfor electronic devices and an electric-programmable magnetic module.

One of exemplary embodiments provides a picking-up and placement processfor electronic devices comprising: (a) providing a first substratehaving a plurality of electronic devices formed thereon, the electronicdevices being arranged in an array, and each of the electronic devicescomprising a magnetic portion; (b) selectively picking-up parts of theelectronic devices from the first substrate via a magnetic forcegenerated from an electric-programmable magnetic module; and (c) bondingthe parts of the electronic devices picked-up by theelectric-programmable magnetic module with a second substrate.

One of exemplary embodiments provides an electric-programmable magneticmodule comprising a micro electro mechanical system (MEMS) chip and abonding equipment is provided. The MEMS chip comprises a plurality ofelectromagnetic coils and each of the electromagnetic coils isindividually controlled. The MEMS chip is assembled with and carried bythe bonding equipment.

Several exemplary embodiments accompanied with drawings are described indetail below to further describe the disclosure in details.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the disclosure, and are incorporated in and constitutea part of this specification. The drawings illustrate embodiments of thedisclosure and, together with the description, serve to explain theprinciples of the disclosure.

FIG. 1 is a flowchart schematically illustrates a picking-up andplacement process for electronic devices in accordance with thisdisclosure.

FIG. 2A through FIG. 2N are cross-sectional views of a picking-up andplacement process for electronic devices in accordance with the firstembodiment of this disclosure.

FIG. 2J′, FIG. 2J″ and FIG. 2J′″ schematically illustrate top views ofdifferent supporting layers.

FIG. 3 is a cross-sectional view of the electric-programmable magneticmodule of this disclosure.

FIG. 4A through FIG. 4E schematically illustrate cross-sectional viewsof fabrication process of the MEMS chip in accordance with thisdisclosure.electronic device

FIG. 4A′ schematically illustrates conductive films of electromagneticcoils.

FIG. 5 is a block diagram of a control system for theelectric-programmable magnetic module shown in FIG. 3.

FIG. 6A through FIG. 6K are cross-sectional views of a picking-up andplacement process for electronic devices in accordance with the thirdembodiment of the disclosure.

DESCRIPTION OF THE EMBODIMENTS

Reference will now be made in detail to the present preferredembodiments of the disclosure, examples of which are illustrated in theaccompanying drawings. Wherever possible, the same reference numbers areused in the drawings and the description to refer to the same or likeparts.

First Embodiment

FIG. 1 is a flowchart schematically illustrates a picking-up andplacement process for electronic devices in accordance with thisdisclosure. Referring to FIG. 1, the picking-up and placement processfor electronic devices comprises the following steps (S10, S20 and S30).First of all, a first substrate having a plurality of electronic devicesformed thereon is provided, wherein the electronic devices are arrangedin an array and each of the electronic devices comprises a magneticportion formed thereon or embedded therein (Step S10). After the firstsubstrate is provided, parts of the electronic devices are selectivelypicked-up from the first substrate via a magnetic force generated froman electric-programmable magnetic module (Step S20). Then, the parts ofthe electronic devices picked-up by the electric-programmable magneticmodule are bonded with a second substrate (Step S30). In one ofexemplary embodiments of this disclosure, the picking-up and placementprocess for electronic devices of this embodiment may further compriserepeating the aforesaid steps (S10 through S30) at least one time sothat the electronic devices formed on first substrates can be placed onand bonded with the second substrate. For example, the electronicdevices formed on first substrates are capable of emitting differentcolored lights. In this embodiment, the electronic devices arephotoelectric devices (e.g. light-emitting diodes, photo-detectors,solar cells and so on) or other electric devices irrelevant to light(e.g. sensors, transistors and so on).

In order to further describe the first embodiment of the disclosure indetails, the first embodiment is described accompanied with FIG. 2Athrough FIG. 2N.

FIG. 2A through FIG. 2N are cross-sectional views of a picking-up andplacement process for electronic devices in accordance with the firstembodiment of this disclosure.

Referring to FIG. 2A, a growth substrate S0 is provided and aphotoelectric semiconductor layer 100 is formed on the growth substrateS0. In one of exemplary embodiments of this disclosure, the growthsubstrate S0 is, for example, a silicon substrate, a silicon carbide(SiC) substrate, a sapphire substrate or other suitable substrate. Thephotoelectric semiconductor layer 100 is, for example, a light-emittingdevice layer, photo-sensing layer, photovoltaic device layer and so on.The photoelectric semiconductor layer 100 is, for example, formed bymetal-organic chemical vapour deposition (MOCVD). In other words, thephotoelectric semiconductor layer 100 may be an epitaxial layer capableof emitting light when a driving current is applied thereto.Specifically, the photoelectric semiconductor layer 100 may include ann-type doped semiconductor layer, a multiple quantum well (MQW)light-emitting layer and a p-type doped semiconductor layer, wherein theMQW light-emitting layer is sandwiched between the n-type dopedsemiconductor layer and the p-type doped semiconductor layer.Furthermore, in addition to the n-type doped semiconductor layer, theMQW light-emitting layer and the p-type doped semiconductor layer, thephotoelectric semiconductor layer 100 may further include a bufferlayer, an n-type cladding layer, a p-type cladding layer, a currentblocking layer, a current spreading layer or the combinations thereof.The photoelectric semiconductor layer 100 formed on the growth substrateS0 is only for illustration, other types of semiconductor layers mayalso be formed on the growth substrate S0.

Referring to FIG. 2B, after the photoelectric semiconductor layer 100 isformed on the growth substrate S0, a plurality of electrodes 102 areformed on the photoelectric semiconductor layer 100. In one of exemplaryembodiments of this disclosure, the electrodes 102 include a pluralityof n-electrodes electrically connected to the n-type doped semiconductorlayer and a plurality of p-electrode electrically connected to thep-type doped semiconductor layer.

Referring to FIG. 2C, after the electrodes 102 are formed on thephotoelectric semiconductor layer 100, the photoelectric semiconductorlayer 100 and the electrodes 102 are temporarily bonded with a firstsubstrate S1 through an adhesive 110, wherein the adhesive 110 adhereswith the electrodes 102 and the photoelectric semiconductor layer 100and is sandwiched between the photoelectric semiconductor layer 100 andthe first substrate S1. In one of exemplary embodiments of thisdisclosure, the first substrate S1 is, for example, a silicon substrate,a silicon carbide (SiC) substrate, a sapphire substrate or othersuitable substrate. The material of the adhesive 110 is, for example,organic materials, organic polymers or other suitable materials withproper adhesion.

Referring to FIG. 2D, after the photoelectric semiconductor layer 100and the electrodes 102 are temporarily bonded with the first substrateS1, the growth substrate S0 is removed to expose a surface 100 a of thephotoelectric semiconductor layer 100. In one of exemplary embodimentsof this disclosure, the growth substrate S0 is lift-off from the surface100 a of the photoelectric semiconductor layer 100 by laser lift-offprocess, for example.

Referring to FIG. 2E, after the growth substrate S0 is removed, athinning process may be optionally performed such that the thickness ofthe photoelectric semiconductor layer 100 can be reduced. After thethinning process is performed, the thinned photoelectric semiconductorlayer 100′ having a surface 100 a′ is formed. In one of exemplaryembodiments of this disclosure, the photoelectric semiconductor layer100 carried by the first substrate S1 may be thinned by chemicalmechanical polishing (CMP) process, chemical etch process, plasma etchprocess or other suitable processes.

Referring to FIG. 2F, after the photoelectric semiconductor layer 100 isthinned, a sacrificial layer 120 is formed on the surface 100 a′ of thephotoelectric semiconductor layer100′. Specifically, the sacrificiallayer 120 covers the surface 100 a′ of the photoelectric semiconductorlayer100′. In one of exemplary embodiments of this disclosure, thematerial of the sacrificial layer 120 is, for example, organicmaterials, organic polymers, dielectric materials, oxides and so on.

Referring to FIG. 2G, a plurality of magnetic portions 130 are formed onthe sacrificial layer 120. In one of exemplary embodiments of thisdisclosure, the material of the magnetic portions 130 is, for example,nickel (Ni), nickel-iron alloy or other suitable ferromagnetic metals.It is noted that the magnetic portions 130 are distributed correspondingto the electrodes 102. For example, the magnetic portions 130 areseparated from one another, each of the magnetic portions 130 is locatedabove a pair of electrodes 102 (i.e. one n-electrode and onep-electrode). The thickness of each magnetic portion 130 is about 1micro-meter. The area and the shape of each magnetic portion 130 may bedesigned based on actual requirements.

Referring to FIG. 2G and FIG. 2H, the photoelectric semiconductor layer100′, the adhesive 110 and the sacrificial layer 120 are patterned toform a plurality of electronic devices ED arranged in array, a pluralityof sacrificial patterns 120 a disposed on the electronic devices ED anda plurality of adhesion patterns 110 a disposed between the electronicdevices ED and the first substrate S1. The adhesion patterns 110 a,sacrificial patterns 120 a and the electronic devices ED constitute aplurality of stacked structures. In one of exemplary embodiments of thisdisclosure, the patterning process of the photoelectric semiconductorlayer 100′, the adhesive 110 and the sacrificial layer 120 is aphotolithography and etching process, for example. As shown in FIG. 2H,the magnetic portions 130 are distributed corresponding to thesacrificial patterns 120 a. For example, each of the magnetic portions130 is disposed on one of the sacrificial patterns 120 a, respectively.Each of the electronic devices ED is between one of the sacrificialpatterns 120 a and one of the adhesion patterns 110 a, respectively.Furthermore, intersected trenches T are formed between the aforesaidstacked structures when the photoelectric semiconductor layer 100′, theadhesive 110 and the sacrificial layer 120 are patterned.

Referring to FIG. 2I and FIG. 2J, lower portions of FIG. 2I and FIG. 2Jare cross-sectional views and upper portions of FIG. 2I and FIG. 2J aretop views. As shown in FIG. 2I and FIG. 2J, a supporting material 140having a predetermined thickness is filled within the intersectedtrenches T, and the supporting material 140 is further patterned to forma supporting layer 140 a. The thickness of the supporting material 140and the supporting layer 140 a is less than the depth of the trenches T.In one of exemplary embodiments of this disclosure, the patterningprocess of the supporting material 140 is a photolithography and etchingprocess, for example. The patterned supporting layer 140 a is formed onthe first substrate S1 and located in the trenches T to support theelectronic devices ED. Specifically, the supporting layer 140 aphysically connects the adjacent electronic devices ED, and at least apart of each adhesion pattern 110 a is exposed by the supporting layer140 a. In other words, a part of sidewall of each adhesion pattern 110 aand a part of the first substrate S1 are exposed by the supporting layer140 a. As shown in top view of FIG. 2J, the supporting layer 140 aextends from the middle edge of one electronic device ED to the middleedge of another electronic device ED. However, the disclosure is notlimited thereto. As shown in top view of FIG. 2J′, the supporting layer140 a connects corners of the electronic devices ED. The supportinglayer 140 a is not required to connect the electronic devices ED. Forexample, the supporting layer 140 a may include patterns separated fromone another, as shown in FIG. 2J″ and FIG. 2J′″.

Referring to FIG. 2K, the adhesion patterns 110 a are removed so as toform a gap G between each of the electronic devices ED and the firstsubstrate S1. Since the supporting layer 140 a physically supports theelectronic devices ED, the electronic devices ED are not in directcontact with the first substrate S1.

Referring to FIG. 2L, parts of the electronic devices ED are thenselectively picked-up from the first substrate S1 via a magnetic forcegenerated from an electric-programmable magnetic module 200. Theelectric-programmable magnetic module 200 of this disclosure isdescribed in detail in accompanying with FIG. 3.

It is noted that the magnetic force generated from theelectric-programmable magnetic module 200 is relevant to the magneticportion 130. The magnetic force must greater than sum of the weight ofthe electronic device ED to be picked up and the connection forceprovided by the supporting layer 140 a, in this way, the electronicdevice ED can separate from the first substrate S1 and can be picked-upby the magnetic force generated from the electric-programmable magneticmodule 200.

Referring to FIG. 2M, the parts of the electronic devices ED picked-upby the electric-programmable magnetic module 200 are placed on andbonded with a second substrate S2. In one of exemplary embodiments ofthis disclosure, the second substrate S2 includes a plurality ofconductive bumps B formed thereon, and the electronic devices EDpicked-up by the electric-programmable magnetic module 200 is placed onand bonded with the second substrate S2 through the conductive bumps B.During the picking-up and placement period, a heating process isperformed such that the electronic devices ED can be successfully bondedonto the second substrate S2.

Referring to FIG. 2N, the sacrificial patterns 120 a on the electronicdevices ED that are bonded with the second substrate S2 are removed. Itis noted that before the sacrificial patterns 120 a are removed, thepicking-up and placement of the electronic devices ED is accomplished.Accordingly, removal of the sacrificial patterns 120 a is optional.

During the electronic devices ED picked-up by the electric-programmablemagnetic module 200 are bonded with the second substrate S2, an in-situtesting for the electronic devices ED is performed to inspect whetherthe bonding or electrical connection between the electronic devices EDand the second substrate S2 is failed. The in-situ testing is performedby the electric-programmable magnetic module 200. In an alternativeembodiments, after the electronic devices ED picked-up by theelectric-programmable magnetic module 200 are bonded with the secondsubstrate S2, an in-situ testing for the electronic devices ED isperformed to inspect whether the bonding or electrical connectionbetween the electronic devices ED and the second substrate S2 is failed.When at least one failed electronic device ED is inspected by thein-situ testing, the at least one failed electronic device ED isde-bonded from the second substrate S2 and a position information of thefailed electronic device ED is recorded. Then, at least one of theremaining electronic devices ED (as shown in FIG. 2K) on the firstsubstrate S1 is picked-up and bonded with the second substrate S2 by theelectric-programmable magnetic module 200 according the aforesaidposition information. In other words, the failed electronic device ED isreplaced by a new electronic device ED through one more picking-up andplacement processes.

FIG. 3 is a cross-sectional view of the electric-programmable magneticmodule of this disclosure. Referring to FIG. 3, theelectric-programmable magnetic module 200 comprises a micro electromechanical system (MEMS) chip 210 and a bonding equipment 220 isprovided. The MEMS chip 210 comprises a plurality of electromagneticcoils 212 and each of the electromagnetic coils 212 is individuallycontrolled by corresponding control lines. Specifically, each of theelectromagnetic coils 212 is electrically connected to a pair of controllines intersected with each other and is enabled or disabled through thepair of control lines. Accordingly, the electromagnetic coils 212 areelectrically addressable. The MEMS chip 210 is assembled with andcarried by the bonding equipment 220. In this embodiment, the bondingequipment 220 is, for example, a currently used flip-chip bonder. Inother words, the MEMS chip 210 of the electric-programmable magneticmodule 200 is compatible with currently used flip chip bonder. In thisembodiment, the MEMS chip 210 may further include a plurality offerromagnetic metal elements 214, wherein each ferromagnetic metalelement 214 is optional disposed in a space surrounding by one of theelectromagnetic coils 212, respectively. For example, the material ofthe ferromagnetic metal elements 214 is nickel (Ni), ferronickel alloyor other suitable ferromagnetic metals having high permeability.

As shown in FIG. 3, the MEMs chip 210 comprises a plurality ofprotrusions P arranged in array, the protrusion P are suitable forcontacting a plurality of electronic devices ED arranged on a firstsubstrate S1 , and each of the electromagnetic coils 212 and theferromagnetic metal element 214 surrounded thereby are located in one ofthe protrusions P, respectively. Each of the electromagnetic coils 212comprises a multi-layered electromagnetic coil. Furthermore, anarrangement pitch of the electromagnetic coils 212 ranges from 1micro-meter to 100 micro-meters, for example. It is noted that theelectromagnetic coils 212 are arranged regularly and the arrangementpitch of the electromagnetic coils 212 is, for example, constant or notconstant. For example, the average arrangement pitch of theelectromagnetic coils 212 is P1, the arrangement pitch of the electronicdevices ED disposed on the first substrate S1 is P2, and P1=N×P2,wherein N is an positive integer. An area (i.e. coverage) of each of theprotrusions P is greater than or equal to an area (i.e. dimension) ofeach of the electronic devices ED so as to prevent the electronicdevices ED from suffering stress during picking-up and placement. Inother words, when the protrusions P are aligned with the electronicdevices ED, the electronic devices ED are entirely covered by theprotrusions P. Based on actual design requirements, the area (i.e.coverage) of each of the protrusions P may be smaller than the area(i.e. dimension) of each of the electronic devices ED, for example.

The MEMS chip 210 comprising the electromagnetic coils 212 and theferromagnetic metal element 214 is fabricated by semiconductor process.The fabrication process of the MEMS chip 210 is described in detail inaccompanying with FIG. 4A through FIG. 4E.

FIG. 4A through FIG. 4E schematically illustrate cross-sectional viewsof fabrication process of the MEMS chip in accordance with thisdisclosure. Referring to FIG. 4A, a substrate S is provided and theabove-mentioned electromagnetic coils 212 are formed on the substrate S(only one electromagnetic coil 212 is shown in FIG. 4A through FIG. 4Efor illustration). For example, the electromagnetic coils 212 comprisesat least one dielectric film 212 a, at least one conductive film 212 band a plurality of conductive vias 212 c, wherein the dielectric film212 a and the conductive film 212 b are stacked on the substrate Salternately, and the conductive vias 212 c are formed in the dielectricfilm 212 a and electrically connect the adjacent conductive film 212 b.In other words, the electromagnetic coils 212 are so-callvertical-stacked electromagnetic coils. The three dimensionalelectromagnetic coils formed by the conductive film 212 b and theconductive vias 212 c has a spiral-shaped structure, as shown in FIG.4A′. The dielectric film 212 a, conductive film 212 b and the conductivevias 212 c are, for example, formed by film deposition, photolithographyand etch processes. The conductive film 212 b and the conductive vias212 c constitute the coil portions of the electromagnetic coils 212 andare formed by materials with high conductivity. The dielectric film 212a protects the coil portions from short circuit. The number of theconductive film(s) 212 b is 1, 2, 3 or more while the number of thedielectric film(s) 212 a is 1, 2, 3 or more.

Referring to FIG. 4B and FIG. 4C, a portion of the dielectric film 212 ais removed such that a plurality of openings OP surrounded by theconductive film 212 b of the corresponding electromagnetic coils 212 areformed (only one opening OP is shown in FIG. 4B and FIG. 4C forillustration). For example, the substrate S is exposed by the openingsOP. However, the disclosure is not limited thereto. Then, theferromagnetic metal elements 214 are formed in the openings OP. Theferromagnetic metal elements 214 are formed by high permeability (μr)materials. The ferromagnetic metal elements 214 are formed by nickel(Ni), nickel-iron alloy or other suitable ferromagnetic metals havinghigh permeability.

Referring to FIG. 4D and FIG. 4E, after the ferromagnetic metal elements214 are formed, a cap dielectric layer 216 is further formed to coverthe electromagnetic coils 212 and the ferromagnetic metal elements 214.Then, the cap dielectric layer 216 and the dielectric films 212 a arepatterned such that the protrusions P of the MEMS chip 210 are formedand the fabrication of the MEMS chip 210 is accomplished. In thisembodiment, the material of the cap dielectric layer 216 is siliconoxide, silicon nitride or other non-conductive polymers, for example.

Second Embodiment

FIG. 5 is a block diagram of a control system for theelectric-programmable magnetic module shown in FIG. 3. Referring to FIG.5, the control system 300 of this embodiment includes a computer 310, anelectrical control unit 320, a mechanical control unit 330 and a heatingcontrol unit 340, wherein the electrical control unit 320, themechanical control unit 330 and the heating control unit 340 areelectrically connected to the computer 310. For example, the computer310 and the electrical control unit 320 control operation of the MEMSchip 210 (e.g. selectively pick-up, in-situ testing). The computer 310and the mechanical control unit 330 control movement of the bondingequipment 220 (shown in FIG. 3). The computer 310 and the heatingcontrol unit 340 control parameters of the heating process during thepicking-up and placement process.

Third Embodiment

FIG. 6A through FIG. 6K are cross-sectional views of a picking-up andplacement process for electronic devices in accordance with the thirdembodiment of the disclosure.

Referring to FIG. 6A through FIG. 6K, the picking-up and placementprocess for electronic devices in accordance with this embodiment issimilar with the picking-up and placement process of the firstembodiment except that the sacrificial layer 120 disclosed in the firstembodiment is omitted in this embodiment. Specifically, after thephotoelectric semiconductor layer 100 is bonded with the first substrateS1 through the adhesive 110, since the electrodes 102 are magneticelectrodes, no sacrificial layer (120) and magnetic portions (130) arerequired to be formed on the surface 100 a of the photoelectricsemiconductor layer 100 and the photoelectric semiconductor layer 100and the adhesive 110 are patterned to form the electronic devices ED anda plurality of adhesive patterns 110 a disposed under the electronicdevices ED (as shown in FIG. 6F). After the electronic devices ED areformed, the sequential processes shown in FIG. 6G through FIG. 6K aresubstantially the same with those shown in FIG. 2I through FIG. 2M.

In the aforesaid embodiments of this disclosure, since the picking-upand placement process can handle relatively small electronic devices(e.g. less than 100 micro-meters) through magnetic force, the bottleneckof fabricating the monolithic micro-displays can be easily resolved.Furthermore, since the MEMS chip of the electric-programmable magneticmodule is compatible with currently used flip chip bonder, it is easy tointroduce such electric-programmable magnetic module into flip chipbonding process to place and bond electronic devices more efficiently.

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the structure of the presentdisclosure without departing from the scope or spirit of the disclosure.In view of the foregoing, it is intended that the present disclosurecover modifications and variations of this disclosure provided they fallwithin the scope of the following claims and their equivalents.

What is claimed is:
 1. A picking-up and placement process for electronicdevices, comprising: (a) providing a first substrate having a pluralityof electronic devices formed thereon, the electronic devices beingarranged in an array, and each of the electronic devices comprising amagnetic portion; (b) selectively picking-up parts of the electronicdevices from the first substrate via a magnetic force generated from anelectric-programmable magnetic module; and (c) bonding the parts of theelectronic devices picked-up by the electric-programmable magneticmodule with a second substrate.
 2. The picking-up and placement processfor electronic devices according to claim 1, further comprising:repeating step (a) through step (c) at least one time to bond theelectronic devices formed on different first substrates with the secondsubstrate.
 3. The picking-up and placement process for electronicdevices according to claim 2, wherein the electronic devices formed ondifferent first substrates emit different colored lights.
 4. Thepicking-up and placement process for electronic devices according toclaim 1, wherein a method for fabricating the first substrate having theelectronic devices thereon comprises: forming a photoelectricsemiconductor layer on a growth substrate; forming a plurality ofelectrodes on the photoelectric semiconductor layer; bonding thephotoelectric semiconductor layer with the first substrate through anadhesive, wherein the adhesive adheres with the electrodes and thephotoelectric semiconductor layer and is between the photoelectricsemiconductor layer and the first substrate; removing the growthsubstrate to expose a surface of the photoelectric semiconductor layer;forming a sacrificial layer on the surface of the photoelectricsemiconductor layer; forming the magnetic portions on the sacrificiallayer; patterning the photoelectric semiconductor layer, the adhesiveand the sacrificial layer to form the electronic devices, a plurality ofsacrificial patterns disposed on the electronic devices and a pluralityof adhesion patterns disposed between the electronic devices and thefirst substrate; forming a supporting layer on the first substrate,wherein the supporting layer is between and connects the electronicdevices, and each of the adhesion patterns is exposed by the supportinglayer; and removing the adhesion patterns to form a gap between each ofthe electronic devices and the first substrate.
 5. The picking-up andplacement process for electronic devices according to claim 4, furthercomprising: thinning the photoelectric semiconductor layer after thegrowth substrate is removed and before the sacrificial layer is formed.6. The picking-up and placement process for electronic devices accordingto claim 4, further comprising: removing the sacrificial patterns on theelectronic devices that are bonded with the second substrate.
 7. Thepicking-up and placement process for electronic devices according toclaim 1, wherein a method for fabricating the first substrate having theelectronic devices thereon comprises: forming a photoelectricsemiconductor layer on a growth substrate; forming a plurality ofelectrodes on the photoelectric semiconductor layer; bonding thephotoelectric semiconductor layer with the first substrate through anadhesive, wherein the adhesive adheres with the electrodes and thephotoelectric semiconductor layer and is between the photoelectricsemiconductor layer and the first substrate; removing the growthsubstrate from the photoelectric semiconductor layer; patterning thephotoelectric semiconductor layer and the adhesive to form theelectronic devices and a plurality of adhesive patterns disposed underthe electronic devices; forming a supporting layer on the firstsubstrate, wherein the supporting layer is between and connects theelectronic devices, and each of the adhesion patterns is exposed by thesupporting layer; and removing the adhesion patterns to form a gapbetween each of the electronic devices and the first substrate.
 8. Thepicking-up and placement process for electronic devices according toclaim 7, further comprising: thinning the photoelectric semiconductorlayer after the growth substrate is removed and before the photoelectricsemiconductor layer is patterned.
 9. The picking-up and placementprocess for electronic devices according to claim 1, wherein theelectric-programmable magnetic module comprises a plurality ofelectromagnetic coils and each of the electromagnetic coils isrespectively controlled.
 10. The picking-up and placement process forelectronic devices according to claim 9, wherein the electromagneticcoils of the electric-programmable magnetic module are arrangedcorresponding to parts of the electronic devices on the first substrate.11. The picking-up and placement process for electronic devicesaccording to claim 1, wherein the electric-programmable magnetic modulecomprises: a micro electro mechanical system (MEMS) chip comprising aplurality of electromagnetic coils, each of the electromagnetic coilsbeing individually controlled; and a bonding equipment, wherein the MEMSchip is assembled with and carried by the bonding equipment.
 12. Thepicking-up and placement process for electronic devices according toclaim 11, wherein the electromagnetic coils of the MEMS chip arearranged corresponding to parts of the electronic devices on the firstsubstrate.
 13. The picking-up and placement process for electronicdevices according to claim 1, further comprising: performing an in-situtesting for the electronic devices during the electronic devicespicked-up by the electric-programmable magnetic module are bonded withthe second substrate.
 14. The picking-up and placement process forelectronic devices according to claim 13, further comprising: when atleast one failed electronic device is inspected by the in-situ testing,de-bonding the at least one failed electronic device from the secondsubstrate and recording a position information of the failed electronicdevice; and picking-up and bonding at least one of the remainingelectronic devices from the first substrate to the second substrate bythe electric-programmable magnetic module according the positioninformation.
 15. The picking-up and placement process for electronicdevices according to claim 1, further comprising: performing a testingfor the electronic devices after the electronic devices picked-up by theelectric-programmable magnetic module are bonded with the secondsubstrate.
 16. The picking-up and placement process for electronicdevices according to claim 15, further comprising: when at least onefailed electronic device is inspected by the testing, de-bonding the atleast one failed electronic device from the second substrate andrecording a position information of the failed electronic device; andpicking-up and bonding at least one of the remaining electronic devicesfrom the first substrate to the second substrate by theelectric-programmable magnetic module according the positioninformation.
 17. An electric-programmable magnetic module, comprising: amicro electro mechanical system (MEMS) chip comprising a plurality ofelectromagnetic coils, each of the electromagnetic coils beingindividually controlled; and a bonding equipment, wherein the MEMS chipis assembled with and carried by the bonding equipment.
 18. Theelectric-programmable magnetic module according to claim 17, wherein theMEMS chip comprises a plurality of protrusions arranged in array, theprotrusions are suitable for contacting a plurality of electronicdevices arranged on a first substrate, and each of the electromagneticcoils is located in one of the protrusions respectively.
 19. Theelectric-programmable magnetic module according to claim 17, whereineach of the electromagnetic coils comprises a multi-layeredelectromagnetic coil.
 20. The electric-programmable magnetic moduleaccording to claim 17, wherein an arrangement pitch of theelectromagnetic coils ranges from 1 micro-meter to 100 micro-meters.